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| MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER DESCRIPTION M63993FP is high voltage Power MOSFET and IGBT module driver for 3Phase bridge applications. PIN CONFIGURATION (TOP VIEW) UFS UPO UFB NC NC NC NC NC VFS VPO VFB NC NC NC NC WFS WPO WFB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 FEATURES FLOATING SUPPLY VOLTAGE ................................. 600V OUTPUT CURRENT ............................................. 300mA 3PHASE BRIDGE DRIVER SSOP-36 APPLICATIONS MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. GND COUT CIN2 CIN1 NC VDD UPIN UNIN VPIN VNIN WPIN WNIN GND PGND WNO VNO UNO VCC PACKAGE TYPE 36P2R M63993FP NC:NO CONNECTION BLOCK DIAGRAM UFB VDD INPUT RESISTOR is 50k INTER LOCK SQ R SQ R UPO UPIN ONE SHOT PULSE - + 10s UFS UNIN VDD/VCC LEVEL SHIFT VCC UNO PGND VPIN same as U Phase VNIN VFB VPO VFS VNO WFB WPO WFS WNO WPIN WNIN same as U Phase THRESHOLD:0.1 VVDD (V) - 1.5s + CIN1 THRESHOLD:0.5 VVDD (V) + 7.5s - COUT CIN2 GND Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Symbol U, V, WFB U, V, WFS VU, V, WPO VCC VU, V, WNO VDD VIN dVS/dt Pt Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Linear Derating Factor Junction Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature U, V, WPI N, U, V, WNI N Ta = 25C, On Board Ta > 25C, On Board Conditions Ratings -0.5~624 VB-24 ~ VB+0.5 VS-0.5 ~ VB+0.5 -0.5 ~ 24 -0.5 ~ VCC+0.5 -0.5 ~ 7 -0.5 ~ VDD+0.5 50 1.2 12.0 30 -30 ~ 125 -30 ~ 100 -40 ~ 125 Unit V V V V V V V V/ns W mW/C C/W C C C RECOMMENDED OPERATING CONDITIONS Symbol U, V, WFB U, V, WFS VCC VDD VIN VPGND Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage Low Side Fixed Supply Voltage Logic Supply Voltage Logic Input Voltage Output GND Voltage U, V, WPI N, U, V, WNI N Test Conditions Min. VS+10 -5 10 4.5 0 -5 Limits Typ. -- -- -- -- -- -- Max. VS+20 500 20 5.5 VDD 5 Unit V V V V V V FUNCTION TABLE 1 (INPUT, OUTPUT and UV) U, V, WPIN H H L L X H U, V, WNIN H L H L H L UV H H H X L L U, V, WPO L L H L L L U, V, WNO L H L L L H Behavioral state Normal OFF VNO ON VPO ON VPO = OFF VNO = OFF, VPIN = VNIN = L simultaneously , VPO OFF VVB UV tripped , VNO ON, VVB UV tripped Note : "L" state of VVB UV mean that UV trip voltage. FUNCTION TABLE 2 (COMPARATOR) CIN1 L H X CIN2 H X L COUT H L L Behavioral state COUT is normal HIGH Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25C, VCC=VBS=15V, VDD=5V unless otherwise specified) Symbol IFS IBS ICC IDD VOH VOL VIH VIL IIH IIL VUVT VUVR tUV IOH IOL tdLH(HO) tdHL(HO) tr(HO) tf(HO) tdLH(LO) tdHL(LO) tr(LO) tf(LO) VCIN1th tVCIN1 VCIN2th tVCIN2 VCOH VCOL Parameter Floating Supply Leakage Current VBS standby Current VCC standby Current VDD standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Trip Voltage VBS Supply UV Reset Voltage VBS Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Comparator 1 Threshold Voltage Comparator 1 Filter Time Comparator 2 Threshold Voltage Comparator 2 Filter Time Comparator H Level Output Voltage Comparator L Level Output Voltage ICO=500A ICO=-500A VPOVNO=0V, VPIN, VNIN=5V,PW<10s VPOVNO=15V, VPIN, VNIN=0V,PW<10s CL=1000pF between HO - VS CL=1000pF between HO - VS CL=1000pF between HO - VS CL=1000pF between HO - VS CL=1000pF between LO - GND CL=1000pF between LO - GND CL=1000pF between LO - GND CL=1000pF between LO - GND VDD=5V VDD=5V IO=0A, VNO, VPO IO=0A, VNO, VPO VPIN, VNIN VPIN, VNIN VPIN, VNIN=5V VPIN, VNIN=0V Test conditions VB=VS=600V per 1 phase Min. -- -- -- -- 14.9 -- 2.1 0.6 -- -- 7.0 7.5 -- -- -- 250 230 -- -- 250 230 -- -- 0.47 -- 2.4 -- 4.5 -- Limits Typ. -- 0.48 -- 0.5 -- -- 3.0 1.5 -- 100 8.0 8.5 7.5 -300 300 300 280 130 100 300 280 130 100 0.5 1.5 2.5 7.5 -- -- Max. 1 -- 0.1 -- -- 0.1 4.0 1.9 1.0 300 9.0 9.5 -- -- -- 350 330 -- -- 350 330 -- -- 0.53 -- 2.6 -- -- 0.5 Unit A mA mA mA V V V V A A V V s mA mA ns ns ns ns ns ns ns ns V s V s V V Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER LEAD DEFINITIONS Lead symbol UFS, VFS, WFS UPO, VPO, WPO UFB, VFB, WFB VCC UNO, VNO, WNO PGND UNIN, VNIN, WNIN UPIN, VPIN, WPIN VDD CIN1 CIN2 COUT High Side floating supply (minus side) High side gate drive output High Side floating supply (plus side) Low side supply Low side gate drive output Low side power ground Logic input for low side gate driver output (LO) Logic input for high side gate driver output (HO) Logic supply Input for comparator 1 Input for comparator 2 Comparator output Description TIMING DIAGRAM 1. Input/Output Timing Diagram VPIN VNIN VPO VNO 2. VBS Supply Undervoltage Lockout Timing Diagram V1 VBS VBSUVR VBSUVT tVBSUV VPO VPIN V1: VBS=VFB-VFS Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER PERFORMANCE CURVES IFS vs. Temperature 10 9 8 7 5 4 3 2 1 0 -1 -20 0 25 50 75 100 125 0.3 0.2 -20 0 IBS (mA) 6 IFS (A) 0.8 0.7 0.6 0.5 0.4 1.0 0.9 IBS vs. Temperature 25 50 75 100 125 Temperature (C) Temperature (C) VIL, VIH vs. Temperature 4.0 3.5 3.0 VIL, VIH (V) IDD (mA) 2.5 2.0 1.5 1.0 0.5 0.0 -20 0 25 50 75 100 125 VIL VIH 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -20 0 IDD vs. Temperature 25 50 75 100 125 Temperature (C) Temperature (C) VBSUVT, VBSUVR vs. Temperature 9.5 300 250 VBSUVR 200 VBSUVT 8.0 IIL (A) 8.5 150 100 7.5 7.0 -20 50 0 -20 IIL vs. Temperature VBSUVT, VBSUVR (V) 9.0 0 25 50 75 100 125 0 25 50 75 100 125 Temperature (C) Temperature (C) Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER IOH, IOL vs. Temperature 450 400 350 IOH, IOL (mA) IOH, IOL vs. Voltage 450 400 IOL IOL IOH, IOL (mA) 350 300 250 200 150 100 50 IOH 300 250 200 150 100 50 0 -20 0 25 50 75 100 125 IOH 0 13 14 15 16 17 18 19 20 Temperature (C) VFB, VCC (V) ROL vs. Temperature 40 35 30 ROL () ROL () ROL vs. Voltage 40 35 30 25 20 15 10 5 25 20 15 10 5 0 -20 0 25 50 75 100 125 0 13 14 15 16 17 18 19 20 Temperature (C) VFB, VCC (V) ROH vs. Temperature 60 50 40 ROH () ROH vs. Voltage 60 50 40 ROH () 30 20 10 0 -20 30 20 10 0 13 0 25 50 75 100 125 14 15 16 17 18 19 20 Temperature (C) VFB, VCC (V) Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER tdLH, tdHL vs. Temperature 450 450 tdLH vs. Voltage 400 400 tdLH (HO) tdLH (LO) tdLH (HO) tdLH (LO) 300 tdLH, tdHL (ns) 300 tdHL (HO) tdHL (LO) tdLH (ns) 350 350 250 250 tdHL (HO) tdHL (LO) 200 -20 0 25 50 75 100 125 200 13 14 15 16 17 18 19 20 Temperature (C) VFB, VCC (V) Power Loss (3Phase operation mode) vs. Frequency 10000 VFB=VCC=15V, VDD=5V, CL=1000pF VS=400V 10000 Power Loss (3Phase operation mode) vs. Frequency (HV=0V) VFB=VCC=15V VDD=5V CL=10000pF CL=1000pF CL=0pF 100 Power Loss (mW) 100 VS=200V VS=100V 10 Power Loss (mW) 1000 1000 VS=300V 1000 10 1 10 100 Frequency (kHz) 1 10 100 Frequency (kHz) 1000 Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER VCIN1th vs. Temperature 0.60 0.60 VCIN1th vs. Voltage 0.55 VCIN1th (V) VCIN1th (V) 0.55 0.50 0.50 0.45 0.45 0.40 -20 0 25 50 75 100 125 0.40 4.5 5 VDD (V) 5.5 Temperature (C) VCIN2th vs. Temperature 3.0 3.0 VCIN1th vs. Voltage 2.8 VCIN2th (V) VCIN1th (V) 2.8 2.6 2.6 2.4 2.4 2.2 2.2 2.0 -20 0 25 50 75 100 125 2.0 4.5 5 VDD (V) 5.5 Temperature (C) tVCIN1 vs. Temperature 3.0 3.0 tVCIN1 vs. Voltage tVCIN1 (S) 1.0 tVCIN1 (S) 2.0 2.0 1.0 0.0 -20 0 25 50 75 100 125 0.0 4.5 5 VDD (V) 5.5 Temperature (C) Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER tVCIN2 vs. Temperature 15.0 15.0 tVCIN2 vs. Voltage tVCIN2 (S) tVCIN2 (S) 10.0 10.0 5.0 5.0 0.0 -20 0 25 50 75 100 125 0.0 4.5 5 VDD (V) 5.5 Temperature (C) VCOH vs. Temperature 6.0 6.0 VCOH vs. Voltage 5.5 VCOH (V) VCOH (V) 5.5 5.0 5.0 4.5 4.5 4.0 -20 0 25 50 75 100 125 4.0 4.5 5 VDD (V) 5.5 Temperature (C) VCOL vs. Temperature 0.18 0.16 0.14 0.12 VCOL (V) VCOL (V) VCOL vs. Voltage 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.10 0.08 0.06 0.04 0.02 0.00 -20 0 25 50 75 100 125 0.00 4.5 5 VDD (V) 5.5 Temperature (C) Sep. 2000 MITSUBISHI SEMICONDUCTORS M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER Thermal Derating Factor Characteristics 2.0 Power Dissipation Pt (W) 1.5 1.2 1.0 0.5 0 0 25 50 75 100 125 Ambient Temperature Ta (C) PACKAGE OUTLINE 36P2R-D EIAJ Package Code SSOP36-P-450-0.80 JEDEC Code - Weight(g) 0.53 Lead Material Cu Alloy Plastic 36pin 450mil SSOP e 36 19 b2 HE E F e1 Recommended Mount Pad Symbol Dimension in Millimeters Min Nom Max - - 2.35 0 0.1 0.2 - 2.05 - 0.3 0.35 0.45 0.2 0.25 0.18 15.0 15.2 14.8 8.4 8.6 8.2 0.8 - - 11.93 11.63 12.23 0.5 0.3 0.7 - 1.765 - - - 0.1 0 - 8 - 0.5 - - 11.43 - 1.27 - - 1 18 A D A2 A1 L1 e y b c Detail F L A A1 A2 b c D E e HE L L1 y b2 e1 I2 I2 Sep. 2000 |
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